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| Transys Electronics LIMITED TO-92L Plastic-Encapsulated Transistors 2SA935 FEATURES Power dissipation PCM : 0.75 W (Tamb=25) TO-92L TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR 3. BASE Collector current : -0.7 A ICM Collector-base voltage V(BR)CBO : -80 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-50A, IE=0 Ic=-2mA, IB=0 IE=-50A, IC=0 VCB=-50V, IE=0 VEB=-4V, IC=0 VCE=-3V, IC=-100mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz -80 -80 -5 -0.5 -0.5 82 390 -0.4 100 20 A A V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking P 82-180 Q 120-270 R 180-390 |
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